sot-23 plastic-encapsulate transistors s9012 transistor (pnp) features z high collector current z complementary to s9013 z excellent h fe linearity marking: 2t1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -500 ma p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 /w t j junction temperature 150 t stg storage temperature -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-0.1ma, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma, i c =0 -5 v collector cut-off current i cbo v cb =-40v, i e =0 -0.1 ua collector cut-off current i ceo v ce =-20v, i b =0 -0.1 ua emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 ua dc current gain h fe v ce =-1v, i c =-50ma 120 400 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma -0.6 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma -1.2 v transition frequency f t v ce =-6v,i c =-20ma, f=30mhz 150 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 5 pf classification of h fe rank l h j range 120-200 200-350 300-400 sot C 23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-1 -10 -100 0 100 200 300 400 -1 -10 -100 -1 -10 -100 -1000 -0.1 -1 -10 1 -10 -100 500 0 25 50 75 100 125 150 0 100 200 300 400 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -4 -8 -12 -16 -20 -0 -20 -40 -60 -80 -100 f t ?? i c h fe ?? common emitter vce=-1v -500 ta=100 ta=25 dc current gain h fe collector current i c (ma) i c collector current i c (ma) collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 ta=25 ta=100 i c v cesat ?? -500 100 100 10 -20 cob cib reverse voltage v (v) f=1mhz i e =0/ i c =0 ta=25 v cb / v eb c ob / c ib ?? capacitance c (pf) -5 vce=-6v ta=25 o c transition frequency f t (mhz) s9012 collector power dissipation pc (mw) ambient temperature ta ( ) pc ?? ta =10 base-emitter saturation voltage v besat (v) collector current i c (ma) ta=25 ta=100 -500 i c v besat ?? static characteristic collector current i c (ma) collector-emitter voltage v ce (v) -400ua -350ua -300ua -250ua -200ua -150ua -100ua i b =-50ua common emitter ta=25 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2011
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